Polishing of Hard Machining Semiconductor Materials Made of Silicon Carbide
Ładowanie...
Data
2011
Autorzy
Tytuł czasopisma
ISSN czasopisma
Tytuł tomu
Wydawca
Wydawnictwo Politechniki Łódzkiej ; Katedra Dynamiki Maszyn - Wydział Mechaniczny Politechniki Łódzkiej
Lodz University of Technology Press ; Department Division of Dynamics - Faculty of Mechanical Engineering
Lodz University of Technology Press ; Department Division of Dynamics - Faculty of Mechanical Engineering
Abstrakt
In the paper the application of silicon carbide (SiC) in electronics especially for production
of p-i-n diodes have been shown. Also the technology of honing process of samples
made of silicon carbide using grinding, lapping and polishing method has been presented.
Finally the process of machining and the stand for surface preparation, selected investigation
results concerning assessment of geometrical microstructure and morphology of
SiC samples surface layer after machining process have been depicted.
Opis
Słowa kluczowe
silicon carbide, grinding, lapping, polishing, microstructure, morphology, surface layer, semiconductor, SiC-pin diode, węglik krzemu, szlifowanie, docieranie, polerowanie, mikrostruktura, morfologia, warstwa powierzchniowa, półprzewodnik, dioda SiC-pin
Cytowanie
Mechanics and Mechanical Engineering,Vol. 15, No. 1, 2011, s. 81-93