Polishing of Hard Machining Semiconductor Materials Made of Silicon Carbide

Uproszczony widok
dc.contributor.authorGołąbczak, Marcin
dc.date.accessioned2020-12-17T08:49:46Z
dc.date.available2020-12-17T08:49:46Z
dc.date.issued2011
dc.description.abstractIn the paper the application of silicon carbide (SiC) in electronics especially for production of p-i-n diodes have been shown. Also the technology of honing process of samples made of silicon carbide using grinding, lapping and polishing method has been presented. Finally the process of machining and the stand for surface preparation, selected investigation results concerning assessment of geometrical microstructure and morphology of SiC samples surface layer after machining process have been depicted.en_EN
dc.identifier.citationMechanics and Mechanical Engineering,Vol. 15, No. 1, 2011, s. 81-93
dc.identifier.issn1428-1511
dc.identifier.urihttp://hdl.handle.net/11652/3118
dc.language.isoenen_EN
dc.publisherWydawnictwo Politechniki Łódzkiej ; Katedra Dynamiki Maszyn - Wydział Mechaniczny Politechniki Łódzkiejpl_PL
dc.publisherLodz University of Technology Press ; Department Division of Dynamics - Faculty of Mechanical Engineeringen_EN
dc.relation.ispartofseriesMechanics and Mechanical Engineering,Vol. 15, No. 1, 2011
dc.subjectsilicon carbideen_EN
dc.subjectgrindingen_EN
dc.subjectlappingen_EN
dc.subjectpolishingen_EN
dc.subjectmicrostructureen_EN
dc.subjectmorphologyen_EN
dc.subjectsurface layeren_EN
dc.subjectsemiconductoren_EN
dc.subjectSiC-pin diodeen_EN
dc.subjectwęglik krzemupl_PL
dc.subjectszlifowaniepl_PL
dc.subjectdocieraniepl_PL
dc.subjectpolerowaniepl_PL
dc.subjectmikrostrukturapl_PL
dc.subjectmorfologiapl_PL
dc.subjectwarstwa powierzchniowapl_PL
dc.subjectpółprzewodnikpl_PL
dc.subjectdioda SiC-pinpl_PL
dc.titlePolishing of Hard Machining Semiconductor Materials Made of Silicon Carbideen_EN
dc.typeartykułpl_PL
dc.typearticleen_EN

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