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Field emission and microstructural characterization of diamond films deposited by HF CVD method
(Wydawnictwo Politechniki Łódzkiej, 2007) Jarzyńska, Dagmara; Staryga, Elżbieta; Znamirowski, Zbigniew; Fabisiak, Kazimierz; Gotszalk, Teodor; Woszczyna, Mirosław; Strzelecki, Włodzimierz; Dłużniewski, Maciej
Electron emission from diamond films (DF) deposited using HF CVD technique on silicon substrates has been studied. The field emission characteristics were analyzed using the Fowler-Nordheim model. The diamond films were also characterized by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Raman Spectroscopy (RS) and Electron Spin Resonance (ESR) techniques. The correlation between electron field emission of investigated films, Raman spectra and concentration of paramagnetic centres has been discussed. The electron emission properties of diamond films improved after doping with nitrogen. The field emission was obtained at turn-on electric field equal to about 10 V/µm and about 3 V/µm, for undoped diamond films and N-doped diamond films, respectively. It seems that the change of turn-on field values and other emissive properties of thin diamond layers may be caused by different content of non-diamond phase (e.g. graphite phase) induced by doping.