Gołąbczak, Marcin2020-12-172020-12-172011Mechanics and Mechanical Engineering,Vol. 15, No. 1, 2011, s. 81-931428-1511http://hdl.handle.net/11652/3118In the paper the application of silicon carbide (SiC) in electronics especially for production of p-i-n diodes have been shown. Also the technology of honing process of samples made of silicon carbide using grinding, lapping and polishing method has been presented. Finally the process of machining and the stand for surface preparation, selected investigation results concerning assessment of geometrical microstructure and morphology of SiC samples surface layer after machining process have been depicted.ensilicon carbidegrindinglappingpolishingmicrostructuremorphologysurface layersemiconductorSiC-pin diodewęglik krzemuszlifowaniedocieraniepolerowaniemikrostrukturamorfologiawarstwa powierzchniowapółprzewodnikdioda SiC-pinartykuł