Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej / Faculty of Technical Physics, Information Technology and Applied Mathematics / W7
Stały URI zbioruhttp://hdl.handle.net/11652/7
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Pozycja Comparison of some properties and molecular structure of MHPOBC and chlorinated MHPOBC(Wydawnictwo Politechniki Łódzkiej, 2020) Bąk, Grzegorz W.Comparison of molecular structure of MHPOBC and chlorinated MHPOBC has been made and presented in the paper. The main difference in molecular structure of MHPOBC and chlorinated MHPOBC molecules consists in different properties of two chemical bonds between the benzene ring with substituted chlorine atom and neighbouring parts of molecule. For chlorinated version of MHPOBC the component of molecular dipole moment perpendicular to the long axis of molecule is substantially smaller than for MHPOBC molecules. As a result of chlorination core of MHPOBC molecules becomes more flexible. These differences of molecular structure lead to easily noticeable differences in macroscopic properties of MHPOBC and its chlorinated version.Pozycja Dielectric properties of ferroelectric liquid crystalline material with chiral nematic phase.(Wydawnictwo Politechniki Łódzkiej, 2015) Wojciechowski, Marek; Bąk, Grzegorz W.; Tykarska, MarzenaThe ferroelectric liquid crystal with nematic N* phase has been investigated using broadband low frequency dielectric spectroscopy. The dielectric relaxation modes related to a ferroelectric Goldstone mode were detected only in a narrow temperature range. Well defined relaxation process was detected in the SmB* phase at about 90 Hz.Pozycja Photo-enhanced conduction in inhomogeneous thin film space charge limited conducting systems.(Wydawnictwo Politechniki Łódzkiej, 2016) Bąk, Grzegorz W.Photo-enhancement of space-charge limited currents in deliberately modified thin-film structures is studied using numerical methods. The obtained results suggest that it should be possible to obtain optically induced increase in current density of the order of 107 in modified thin film structures as a result of deliberate modification of trap density at the emitter consisting in formation of high density of traps at the emitter.